Intelligent robot system for inspection and testing of electronic devices.

  • Beni G.
  • Hackwood S.
  • Trimmer W.
  • Zuber J.

The system consists of a Seiko RT-3000 robot, an Automatix Autovision II vision system, two CCD Panasonic cameras plus peripherals. The latter include two testing probe-stations, a passive-hand with magnetic pick-up fingertips, racks and pallets. The system is interconnected through serial RS-232 ports and I/O switches. The system is capable ...

High resistivity in InP helium bombardment.

  • Feldman L.
  • Focht M.
  • Macrander A.
  • Schwartz B.

Helium implants over a fluence range of 10(11) to 10(16) ions/cm (2), reproducibly form high resistivity regions in both p- type and n-type InP. Average resistivities of greater than 10(9) ohm-cm for p-type InP and of 10(3) ohm-cm for n-type InP are reported. Results are presented of a Monte Carlo ...

Fabrication of low dark current planar photodiodes using an open-tube method for Zn-diffusion into InP and In(0.53)Ga(0. 47)As.

  • Camlibel I.
  • Chin A.
  • Guggenheim H.
  • Singh S.
  • Van Uitert L.
  • Zydzik G.

A process for fabricating planar low dark current InP and In (0.53)Ga(0.47)As/InP based photodetectors is described. The process utilizes sandwich films of ZnF(2) and a SiO(2), borosilicate, or Al(2)O(3) encapsulant, which yield localized p-n junctions in an open tube air-ambient. Dark currents as low as 5 x 10 (-12)A and ...

Convection in a rectangular cavity due to internal heat generation.

  • Blythe P.
  • Daniels P.
  • Simpkins P.

Two-dimensional convection patterns driven by internal heat sources are analyzed in the large Rayleigh number limit. The flow field is similar to that encountered in a Czochralski apparatus or in certain large scale thermal cooling problems. An existing theory for rectangular cavities, based on the modified Oseen technique and the ...

A low dark-current, planar InGaAs p-i-n photodiode with a quaternary InGaAsP cap layer.

  • Dutt B.
  • Kim O.
  • Mccoy R.
  • Zuber J.

In(0.53)Ga(0.57)As p-i-n photodiodes have become the most suitable photodetectors for long wavelength (1-1.65 microns) optical fiber communication systems due to their low dark-currents of the order of a few nanoamperes. Further reduction of dark- current to subnanoampere range will bring improvement in the receiver sensitivity. In this paper we report ...

Annealing kinetics of thin Permalloy films.

  • Butherus A.
  • Nakahara S.

Low-temperature (250-310C) annealing was found to cause a large decrease in the resistivity of RF sputter-deposited thin (less than or equal to 500A) Permalloy films. A transmission electron microscope was used to investigate a probable microstructural change occurring during the annealing. It was found that the low-temperature annealing induced considerable ...

Optimum emitter grading for heterojunction bipolar transistors.

  • Capasso F.
  • Gossard A.
  • Hayes J.
  • Malik R.
  • Wiegmann W.

A simple procedure has been used to determine the optimum emitter grading for a heterojunction bipolar transistor (HBT). Use of this procedure allows maximum hole confinement in addition to minimum base/emitter turn-on voltage, leading to a negligible collector/emitter offset voltage, both of which are necessary for high performance devices. By ...

The synthesis of cis- and trans-2,4-Di-n-octyltetrahydrofuran: Models for the disubstituted cyclic ether groups in reduced poly(vinyl chloride-co-carbon monoxide).

  • Schilling F.
  • Starnes W.
  • Villacorta G.
  • Wescott L.

2,4-disubstituted tetrahydrofuran groups have been observed in the backbone of carbon monoxide-vinyl chloride copolymers that had been reduced sequentially with lithium aluminum hydride (LAH) and tri-n-butyltin hydride. These cyclic ether structures are believed to arise from the intramolecular nucleophilic displacement of adjacent chloro substituents by intermediate metallic alkoxides formed during ...

Channelled-substrate buried heterostructure InGaAsP/InP lasers with vapor phase epitaxial base structure and liquid phase epitaxial regrowth.

  • Dautremont-Smith W.
  • Dutta N.
  • Flynn E.
  • Johnston W.
  • Karlicek R.
  • Nelson R.
  • Strege K.
  • Wilt D.

Channelled-substrate buried heterostructure lasers have been fabricated with vapor phase epitaxial grown base structures and liquid phase epitaxial regrowth. These devices have low threshold currents (14 mA minimum, median 19 mA), exhibit a pulsed threshold current temperature dependence with a characteristic temperature of 55 K, and operate CW up to ...

Electron shake-up in two-photon excitation of core electrons of Rydberg autoionizing states.

  • Bokor J.
  • Cooke W.
  • Freeman R.
  • Jopson R.

The results of a theoretical and experimental investigation of satellite line strengths in two-photon transitions to Rydberg autoionizing states in multi-electron atoms are presented. In studies of 6snd - 7sn'd two-photon transitions in Ba I, the distribution of line strengths over various final 7sn'd states for a given 6snd intitial ...

The role of inorganic materials in dry-processed resist technology.

  • Stillwagon L.
  • Taylor G.
  • Wolf T.

A variety of materials and techniques are discussed concerning the use of inorganic materials in resist patterning technology. Their utility results from the ability of certain inorganic elements to function as in situ etch masks for underlying organic materials. Ion implantation experiments demonstrate that as little as 10(16) inorganic atom/cm(2) ...

Reliability of InGaAs photodiodes of SL applications.

  • Chen F.
  • Saul R.
  • Shumate P.

In this paper, we describe a comprehensive reliability program which is aimed at asessing and assuring the reliability of InGaAs photodiodes. A major portion of this work has involved device operation at overstress conditions. Results to date indicate that for receiver photodiodes a design exists which is predicted to meet ...

Programming pearls, column 1: Cracking the oyster.

  • Bentley J.

Programming Pearls is a forthcoming bimonthly column in Communications of the ACM devoted to various aspects of computer programming. This first column concentrates on the method of extracting a clean computational problem from a messy real problem; it is based on a single case study that arose in a particular ...

Gold diffusion into the p-contacting quaternary in In(x)Ga (1-x)As(y)P(1-y)/InP heterojunction structures.

  • Robin J.
  • Schreiber H.
  • Schwartz G.

The present study has examined the migration of Au into InxGa (1-x)AsyP(1-y)/InP heterojunction structures utilizing Auger spectroscopy and scanning electron-induced X-ray fluorescence in conjunction with chemical etching. Chemical dissolution of the reactively alloyed gold (1.2 wt. % Be) p-metal contact reveals a pitted quaternary surface which is deficient in indium. ...

RIE planarization process for magnetic bubble devices.

  • Chi G.
  • Mogab C.

A reactive ion etching process, which planarizes the silicon dioxide film deposited over steps in AlCu conductor patterns, has been developed for wide gap magnetic bubble devices. A conventional fabrication sequence was used through deposition of the spacer SiO2 layer which isolates AlCu conductors from permalloy propagate elements. Prior to ...

A packet- and circuit-switched communications exchange.

  • Budrikis Z.
  • Netravali A.

We present a design concept for a communications exchange based on packetized time-division multiplexing. It will support packet-switching of data and circuit-switching of real-time signals, with a wide range of possible bit rate. Key components of the exchange are a central controller and two unidirectional bus loops with attached access ...

Oxygen inhibition of acrylate photopolymerization.

  • Nunez I.
  • Rondeau R.
  • Wight F.

When photocurable acrylate materials are exposed to ultraviolet light of sufficiently low intensity, as for example with a collimated imaging lamp, the surface of the film remains essentially uncured well after the bulk of the film has polymerized to a significant extent. This lack of surface cure is due to ...


  • Gordon E.
  • Levy U
  • Logan R.