November 11, 2017

Photonic integrated circuit based on Hybrid III-V/Silicon Integration

  • Brenot R.
  • Chen Y.
  • De Valicourt G.
  • Dong P.
  • Eggleston M.
  • Kim K.
  • Lee S.
  • Melikyan A.
  • Sethumadhavan C.
  • Simsarian J.
  • Verdier A.
  • Zhu C.

This paper summarizes recent advances of integrated hybrid InP/SOI lasers and transmitters based on edge coupling. At first, we review the different integration method between III-V materials and silicon. Then we focus on using an external III-V chip coupled via edge coupling to our silicon photonic integrated circuit. The paper reports on the results of wavelength tunable lasers with one or two ring resonators as well as reflectivity tunable integrated mirror. We then demonstrate that, thanks to the high-quality silicon bend waveguides, a wide thermal tuning range, exceeding the C band, with a high side mode suppression ratio above 35 dB can be achieved. Moreover, design of external silicon cavities enables the realization of a broad range of on-chip functionalities as well as advanced hybrid transmitters. Parallel wavelength tunable cavities and compact VOA-controlled array waveguide grating on silicon are integrated with a RSOA, creating fast wavelength switching laser. We further demonstrate the integration of on-chip temperature sensor, photodiode and wavelength locker for wavelength stabilized operation over a large temperature range. Furthermore, integrated transmitter with combined silicon modulators and tunable hybrid III-V/Si lasers are reported. The integrated transmitter for OOK signal generation exhibits more than 30 nm wavelength tunability and excellent bit-error-rate performance up to 40 Gb/s. Multi-channel integrated transmitter is then reported with combined silicon-based AWG laser cavity and multiple ring modulators. Finally, advanced wavelength-tunable hybrid III-V/Si transmitter with two microring modulators nested in a Mach-Zehnder interferometer is demonstrated for QPSK generation where BPSK signal is generated by each ring.

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