RECOMBINATION ENHANCED ANNEALING OF THE E1 AND E2 DEFECT LEVELS IN 1-MEV ELECTRON IRRADIATED N-GALLIUM ARSENIDE. - Nokia Bell Labs

2013-11-14T23:16:24+00:00
2014-04-05T00:27:44+00:00
fb48db101c04ed68b83951da05102cb11b682ec4
1637
latest