Claire Besançon

Paris-Saclay, France
Research Engineer


Claire Besançon received her Ph.D degree in photonics from the University of Grenoble Alpes, France, in 2020. She was working on the growth, fabrication and characterization of III-V laser sources onto silicon within the European Project H2020 PICTURE ( Since March 2020, she is a MOVPE researcher at Nokia Bell Labs, III-V Lab. Her current research activities focus on the development of PICs in the silicon photonics platform using advanced regrowth techniques such as Selective Area Growth (SAG), Butt-Joint regrowth (BJ) or Semi-Insulating Buried Heterostructure (SIBH).


  • Ph.D in Photonics from University of Grenoble Alpes
  • MSc in Physics from Grenoble Institute of Technology (Phelma INP-Grenoble)
  • MSc in Photonics/Semiconductor from University Grenoble Alpes

Selected articles and publications

  • C. Besancon et al., “AlGaInAs MQW Laser Regrowth on Heterogenerous InP-on-SOI : Performance for Different Silicon Cavity Designs,” in 2021 Optical Fiber Communications Conference and Exhibition (OFC), 2021.
  • C. Besancon et al., “Laser Array Covering 155 nm Wide Spectral Band Achieved by Selective Area Growth on Silicon Wafer,” in Proceedings of European Conference on Optical Communication (ECOC), 2020.
  • C. Besancon et al., “Comparison of AlGaInAs-Based Laser Behavior Grown on Hybrid InP-SiO₂/Si and InP Substrates,” IEEE Photonics Technol. Lett., vol. 32, no. 8, pp. 469–472, Apr. 2020.
  • C. Besancon et al., “Epitaxial Growth of High-Quality AlGaInAs-Based Active Structures on a Directly Bonded InP-SiO2/Si Substrate,” Physica Status Solidi (A) Applications and Materials Science Phys., vol. 217, no. 3, p. 190052, Feb. 2020.