DC getter sputtered amorphous GdCo films: Magnetic anisotropy and in-depth chemical concentration.

  • Bacon D.
  • Gyorgy E.
  • Hong M.

DC getter sputtering was used to deposit amorphous GdCo films. No bias voltage was applied to the substrates during the deposition. A uniform chemical composition throughout the depth of the film was observed using Rutherford backscattering spectrometry. These GdCo films show perpendicular magnetic anisotropy. Furthermore, the magnetic anisotropy can be ...

Measurements on high speed transresistance amplifiers in fine line NMOS.

  • Abidi A.
  • Kasper B.
  • Kushner R.

Two trans-resistance amplifiers have been designed and fabricated in fine line NMOS. Both designs have been characterized on a 50 ohm system, with the l GHz circuit almost meeting its design objective, while the 2 GHz circuit falls short by about a factor of 3.

Proposed specification of BX.25 link layer protocol.

  • Kurshan R.

This implicit objective of the OSN Protocol Specification for BX.25 Level 2 is to define the protocol in such a way that all implementations will be mutually compatible and will satisfy given performance criteria. It is argued here that any such definition couched in ordinary English can be expected to ...

Thermal decomposition of strontium nitrite monohydrate.

  • Gallagher P.

Themogravimetry and differential thermal analysis in N(2) and mass spectrographic evolved gas analysis in vacuum were performed on Sr(NO(2))(2)H(2)O. The results in N(2) indicate a single step loss of water around 150C followed by a solid(1) - solid (2) phase transition in the anhydrous Sr(NO(2)) around 265C and subsequent melting ...

Observations of comet IRAS-Araki-Alcock from Bell Laboratories.

  • Bally J.
  • Stark A.

This memo describes a search for three molecular species, (12)CO, CS, and CN, in comet IRAS-Araki-Alcock. The observations required the development of some novel observing methods to track the fast moving object with the 7-meter antenna. We failed to detect any spectral features in the comet. Our limit on the ...

Nanolithography on solid substrates.

  • Joy D.

This paper examines, by means of a Monte Carlo simulation, the conditions under which electron beam lithography could be used to produce nanometer scale structures on a solid substrate. The simulation shows that, for a high incident beam energy (in excess of 30 keV) and a small diameter probe (less ...

Electrical transmission lines as models for soliton propagation in material: Part I. Elementary aspects of video solitons.

  • Peterson G.

The study of nonlinear wave propagation along distributed electrical and mechanical transmission lines is important because these lines serve as useful models for nonlinear wave motion with dispersion has been shown to produce solitons in optical fibers. Electrical distributed lines themselves have an obvious direct application to integrated circuit parametric ...

Nonlinear saturated absorption in resonant media: level degeneracy induced polarization effects.

  • Agrawal G.

The effect of level degeneracy on saturated absorption in resonant medium is considered using a simple but realistic three-level system to model J=1 -> J=0 atomic transition. Assuming homogeneous broadening and exact resonance, an analytic nonperturbative expression for the medium susceptibility is obtained and used to study propagation of an ...

A comparison of Si and GaAs E/D logic performance.

  • Bayruns R.
  • Taylor G.

The relative merits of Si and GaAs enhancement/depletion logic gates are compared for lithographic rules of 1 micron and minimum gate lengths of 0.7 and 1.0 micron respectively, to within plus or minus 0.1 micron. An analytic description of ring oscillator delays is reviewed and applied to both cases. Good ...

Carrier saturation in tin-doped InP films grown by liquid phase epitaxy.

  • Bonner W.
  • Chin B.
  • Frahm R.
  • Sheng T.

We have investigated tin doping at high concentrations in InP films grown on <100>InP by liquid phase epitaxy. Contrary to previously published work, our Hall measurements show that the carrier concentration saturates at ~6x10(18)/cm(3) for a mole fraction of tin in liquid >~0.08. Measurements of actual tin concentrations in the ...

Characterization of InGaAs/InP heteroepitaxial layers grown by vapor phase epitaxy.

  • Chu S.
  • Jodlauk C.
  • Johnston W.
  • Laroe A.
  • Macrander A.
  • Strege K.

The background carrier concentration of undoped VPE-grown In (1-x)Ga(x)As/InP has been found to correlate to the x-ray linewidth. Lattice mismatches were measured using an x-ray double crystal diffractometer, and due to the general occurrence of tetragonal distortion it was necessary to measure both the lattice mismatch perpendicular to the (100) ...

Extrapolating a bandlimited function from its samples taken in a finite interval.

  • Landau H.

We examine how well a bandlimited function can be approximated from knowledge of its samples taken in a finite interval, at a rate greater than the Nyquist.

Effect of H(2) annealing on the inversion layer mobility.

  • Manchanda L.

In this memo we present some results on the inversion layer mobility for our NMOS devices. Our devices do not follow the universal mobility curve reported by Clemens and Sabnis. Annealing in H(2) at 700C results in an improvement of mobility for low as well as high electric field regions. ...

BER degradations caused by switching in digital mobile radio systems using base station diversity.

  • Glance B.

The degradation is caused by the discontinuities of the signal received by the mobile when transmission is switched from one base station to another. To evaluate this effect, a simple statistical model has been devised for the spatial variations of shadow fading. It consists of a one-parameter spatial autocorrelation function ...

Epitaxial InP/fluoride/InP(001) double heterostructures grown by molecular beam epitaxy.

  • Forrest S.
  • Johnston W.
  • Tu C.

We report the first epitaxial semiconductor-insulator-semiconductor (SIS) double heterostructures using III-V compound semiconductor InP. The samples, InP/CaF2/InP(001) and InP/BaxSr1-xF2/InP (001), were grown by molecular-beam epitaxy and have lattice- mismatches of -6.9% and +2.0%, respectively. SIS structures have potential applications as electronic and photonic devices, especially in monolithic integrated optics, since ...

pH dependent voltammetry of iridium oxide films.

  • Dautremont-Smith W.
  • Lauks I.
  • Yuen M.

We report studies of Anodic Iridium Oxide Films (AIROF's) and Sputtered Iridium Oxide Films (SIROF's) by voltammetric analysis and open circuit pH response. The voltage and pH dependent double injection of ions and electrons into the films is described in terms of a model of an equilibrium change in electronic ...

Characteristics of tin and cadmium doping in liquid phase epitaxial grown InGaAsP layers.

  • Ballman A.
  • Degani J.
  • Tamari N.

The characteristics of tin and cadmium doping of liquid phase epitaxial grown InGaAsP layers have been investigated. A change in the solid composition of the quaternary is introduced as a result of the perturbation of the liquid solution composition by the dopants. The leads to a change in the lattice ...

Wavelength conversion with excimer laser.

  • Bokor J.
  • Bucksbaum P.
  • Eichner L.
  • Freeman R.
  • Storz R.

Harmonic generation was studied using a high powered, ultrashort pulse KrF excimer laser. Third, fifth, and seventh harmonic outputs were observed at 82.8 nm, 49.7 nm, and 35.5 nm. The nonlinear interaction took place at the intersection of the laser focus with a pulsed, supersonic gas jet expansion.

Dynamic spectra of 1.3 micron InP lasers under Pseudo-random word modulation.

  • Shen T.

The dynamic spectra under low-duty-cycle pulse modulation, and 180 Mbit/s and 432 Mbit/s pseudo-random pulse modulation were studied for buried-heterostructure and channeled substrate InP lasers. The average dynamic spectra of these lasers differ from their DC spectra, and also show variation between low- duty-cycle pulse modulation and pseudo-random pulse modulation. ...