PHASE CORRELATION BETWEEN LONGITUDINAL MODES IN SEMICONDUCTOR SELF-PULSATING DBR LASERS

  • Duan G.
  • Provost J.
  • Renaudier J.
  • Sillard-Debregeas H

Phase correlation leading to self-pulsation (SP) in semiconductor distributed Bragg reflector (DBR) lasers is investigated experimentally and theoretically. Under proper biasing conditions, the laser oscillates with three main modes and we observe that each two-modes beating provides SP with identical spectral linewidth. Under the same operating conditions, the measured spectral ...

TRAFFIC ENGINEERING IN METRO ETHERNET

  • Ali M.
  • Chiruvolu G.
  • Ge A.

Traffic engineering is a critical issue that has to be addressed in metro Ethernet networks for proper and efficient resource utilization as well as facilitating quality of service. This article aims at understanding the relevant issues and outlines novel algorithms for multipoint-TE in the metro Ethernet. We first propose a ...

IMPACT OF PUMP OSNR ON NOISE FIGURE FOR FIBER-OPTICAL PARAMETRIC AMPLIFIERS

  • Bayart D.
  • Durecu-Legrand A.
  • Simmonneau C

Electrical measurements of the noise figure of a fiber-optical parametric amplifier are presented and compared with optical measurements. The transfer of pump noise by four-wave mixing was clearly demonstrated. A numerical model was developed to simulate the transfer of pump noise and validated by these measurements. Using this model, we ...

ROBUST SOURCE DECODING OF VARIABLE-LENGTH ENCODED VIDEO DATA TAKING INTO ACCOUNT SOURCE CONSTRAINTS

  • Nguyen H.

We first provide an analysis of available redundancy remaining in compressed video data. This residual redundancy has two origins: the variable-length code (VLC) syntax and the source constraints. We compute the two in terms of equivalent redundancy bits. Then, a VLC decoding algorithm able to exploit both VLC syntax and ...

FABRICATION OF THICK SIO2 BLOCK WITH DRY-RELEASED UNDERNEATH CAVITY IN SILICON FOR RF MEMS

  • Puech M.

A so-called SiDeox new technology to fabricate a thick silicon oxide layer with an underneath cavity for applications in RF MEMS devices is presented. Photolithography was performed on the silicon substrate with 1.8 /spl mu/m patterns. Deep reactive ion etching (DRIE) using Alcatel A601E ICP etcher was performed to form ...

TEM CELL MEASUREMENTS OF AN ACTIVE EMC TEST CHIP

  • Bonjean F
  • Criel S.
  • De Smedt R.
  • Spildooren G

SINGLE CHIP 58 GHZ RADIO RELAY FRONT END

  • Gouessant P
  • Marchand P.

This paper describes a solution for a low cost front end to be used in point to point radio relays operating in the uncoordinated 57.5 to 59 GHz frequency band. The main characteristics of the equipment operating in this band in Europe have recently been agreed in draft by the ...

INP DHBT TECHNOLOGY AND DESIGN FOR 40 GBIT/S FULL-RATE-CLOCK COMMUNICATION CIRCUITS

  • Alexandre F.
  • Berdaguer P.
  • Blayac S.
  • Dhalluin V
  • Godin J.
  • Kahn M.
  • Kasbari A.
  • Konczykowska A.
  • Moulu J.
  • Pinquier A.
  • Riet M.

DEVELOPMENT OF A COMMERCIAL , 38 GHZ , COMMUNICATION

  • Amati M
  • Colombo G
  • Gulloch W
  • Nobili R
  • Politi M

DFF-DRIVERS ICS FOR 40 GB/S ETDM IN INP DHBT TECHNOLOGY

  • Blayac S.
  • Godin J.
  • Jorge F.
  • Konczykowska A.
  • Moulu J.
  • Riet M.

3D MICROWAVE MODULES FOR SPACE APPLICATIONS

  • Cazaux J.
  • Coello-Vera A.
  • Drevon C.
  • George S.
  • Monfraix P.
  • Tronche C
  • Ulian P

NEW 3D LOW LOSS , WIDE BAND MICROWAVE INTERCONNECTION

  • Coello-Vera A.
  • Drevon C.
  • George S.
  • Monfraix P.
  • Tronche C
  • Ulian P