Electron transfer induced dimerization of Spiro[4.2] heptadiene- -A facile radical cation diels alder reaction.
- Abelt C.
- Roth H.
- Schilling M.
The electron transfer induced dimerization of spiro[4.2] heptadiene and the corresponding cleavage reaction of the [4+2]dimer have been investigated in polar solvents. CIDNP effects observed during these reactions are interpreted in terms of two different dimer radical cations a singly linked (S(.+)) and a doubly linked species (D.+)). These results ...
Fast response GeAu heat pulse bolometers for use in ballistic phonon, high magnetic field experiments.
- Baldwin K.
- Chin M.
- Narayanamurti V.
- Stormer H.
High speed, high magnetic field bolometers, capable of detecting ballistic phonons were fabricated of GeAu operating near the metal-insulator transition. Direct phonon propagation, through a 3mm lnP substrate at 1.2K were observed, for the first time, over a magnetic field range of 0 to 10 Tesla. No appreciable change in ...
A bipolar-CMOS-DMOS integrated circuit technology in dielectrically isolated wafer with applications to access and break switch arrays.
- Dunn C.
- Furnanage R.
- Lu C.
- Riffe P.
- Shibib M.
- Tsai N.
This work reports a dielectrically isolated high voltage Bipolar- CMOS-Dmos (BCDMOS) integrated circuit technology which has been successfully developed to handle several hundreds of volts. This technology integrates Bipolar, CMOS, DMOS, PNPN. and JFET devices on a single chip. The BCDMOS process is chosen to be an optimized poly-gate N-channel ...
Low noise high gain single chip NMOS AGC amplifiers for high speed lightwave systems.
- Jindal R.
The design and test results of a single chip NMOS AGC amplifier are described. The amplifier has a maximum flat gain of 50 dB and a noise figure of 11 dB. The flat response from near DC to a 3 dB bandwidth close to 1 Ghz does not require tuning ...
Resonant Raman study of low temperature exciton localization in GaAs quantum wells.
- Chemla D.
- Gossard A.
- Pinczuk A.
- Zucker J.
We have observed an unexpected temperature dependence in the intensity of Raman scattering resonant with the ground state exciton in GaAs-AlGaAs quantum well heterostructures. We show that the temperature dependence is related to the homogeneous linewidth for quantum well excitons and yields new insight into low temperature exciton localization.
High speed zone plate alignment systems.
- Cheng M.
- Feldman M.
- Wong G.
Zone plate alignment is routinely used in X-ray exposure tools and optical step and repeat cameras. As with any alignment technique, the time taken to acquire and analyze the alignment data must be added to the wafer exposure time. This paper describes a technique in which the data may be ...
Chapter 3: Selected topics in the theory of telecommunications fibers.
- Marcuse D.
This material is intended as Chapter 3 of the book "Optical Fiber Telecommunications II" edited by S.E. Miller and I.P. Kaminow. The chapter consists of 6 sections with the following titles: 3.1 Pulse Propagation in Single Mode Fibers, 3.2 Dispersion Shifted Fibers, 3.3 Polarization Maintaining Fibers, 3.4 Solitons, 3.5 Detrimental ...
Architecture of the Multi-Array Processor (MAP).
- Padmanabhan K.
MAP (Multi-Array Processor) is a wafer-based high performance multiprocessor architecture for numerical applications. MAP implements a three level control hierarchy, with pipelined processing elements at the first level, a two-dimensional nearest neighbor mesh at the second level, and a few such arrays working out of a shared memory at the ...
Effect of gain nonlinearities on period doubling and chaos in directly modulated semiconductor lasers.
- Agrawal G.
The mode gain in semiconductor lasers decreases with an increase in power due to nonlinear processes such as spectral hole burning. When these small nonlinearities are included in the single- mode rate equations, it is found that they can eliminate the previously predicted sequence of period-doubling bifurcations leading to chaos ...
Picosecond Surface Electron Dynamics on Photoexcited Si(111)2x1 Surfaces.
- Bokor J.
- Bucksbaum P.
- Freeman R.
- Storz R.
Surface electrons were selectively photoexcited into the normally unoccupied antibonding surface state on the cleaved Si(111)2x1 surface using 2.8microns infrared laser radiation. The time decay of the antibonding state population was then followed in real time using picosecond time-resolved UV photoemission spectroscopy. The relaxation dynamics were found to be cleavage ...
GaInAs(P)/InP quantum well structures by gas source molecular beam epitaxy.
- Chu S.
- Hamm R.
- Panish M.
- Temkin H.
Quantum well structures containing single isolated structures and superlattices of GaInAs/InP and GaInAsP/InP and GaInAsP/InP have been grown by gas source MBE to establish the current limits of dimensional precision for the growth of these materials and for evaluation of the method. Single quantum wells as thin as 5A with ...