High-speed Room Temperature Terahertz Detectors based on InP Double Heterojunction Bipolar Transistors

  • Blin S.
  • But D.
  • Consejo C.
  • Coquillat D.
  • Dyakonova N.
  • Gutin A.
  • Knap W.
  • Konczykowska A.
  • Muraviev A.
  • Nodjiadjim V.
  • Nouvel P.
  • Pénarier A.
  • Riet M.
  • Ruffenach S.
  • Shur M.
  • Teppe F.
  • Torres J.

Compact and fast detectors, for imaging and wireless communication applications, require efficient rectification of electromagnetic radiation with frequencies approaching 1 THz and modulation bandwidth up to a few tens of GHz. This can be obtained only by using a mature technology allowing monolithic integration of detectors with low-noise amplifiers. One of the best candidates is indium phosphide bipolar transistor (InP HBT) technology. In this work, we report on room temperature high sensitivity terahertz detection by InP double-heterojunction bipolar transistors (DHBTs) operating in a large frequency range (0.25-3.1 THz). The performances of the DHBTs as terahertz sensors for communications were evaluated showing the modulation bandwidth of investigated DHBTs close to 10 GHz.

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