March 30, 2017

Tunable X-Band Optoelectronic Oscillators Based on External-Cavity Semiconductor Lasers

  • Chang C.
  • Choi D.
  • Citrin D.
  • Dong J.
  • Lelarge F.
  • Locquet A.
  • Martinez A.
  • Merghem K.
  • Ramdane A.
  • Wishon M.

Laser diodes with optical feedback can exhibit periodic intensity oscillations at or near the relaxation-oscillation frequency. We demonstrate optoelectronic oscillators based on external-cavity semiconductor lasers in a periodic dynamical regime tunable over the entire -band. Moreover, unlike standard optoelectronic oscillators, we need not employ the time-dependent optical intensity incident on a photodiode to generate the microwave signal, but rather have the option of generating the electrical microwave signal directly as a voltage at the laser-diode injection terminals under constant current operation; no photodiode need be involved, thus circumventing optical-to-electrical conversion. We achieve a timing jitter of ps and a quality factor of across the entire -band, that ranges from 6.79 to 11.48 GHz. Tuning is achieved by varying the injection current .

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