CW OPERATION OF A GALLIUM INDIUM ARSENIDE PHOSPHIDE/INDIUM PHOSPHIDE LASER WITH A CHEMICALLY-ETCHED MIRROR.
The first c.w. operation of a GaInAsP/InP stripe laser (ÃÂ¿ÃÂ¿1.3 ÃÂ¿m) having a chemically etched mirror has been achieved at room temperature. One of the cavity facets was monolithically formed by a wet chemical etch and passivated with a Si3N4 film to simplify bonding the chip on a heat sink. Threshold currents for 10 ÃÂ¿m-stripe lasers were as low as 190 mA and the differential quantum efficiencies from the cleaved facet were ~18% (27ÃÂ°C, pulsed). C.W. operation was obtained up to 35ÃÂ°C.View Original Article