Impact Ionization and Real-Space Transfer of Minority Carriers in Charge Injection Transistor.

  • Canali C.
  • Cho A.
  • Luryi S.
  • Manfredi M.
  • Mastrapasqua M.
  • Sivco D.
  • Tedesco C.
  • Zanoni E.

High electric fields in the channel of InGaAs/InAlAs heterostructure complementary charge injection transistor give rise to impact ionization and real-space transfer of minority holes from the channel. These phenomena are investigated by measuring light emission in the 1.1-3.1 eV energy range for different points on the electrical characteristics. The effective carrier temperature, determined from the exponential tails of electroluminescence spectra, is 2100K in the channel and 450K in the barrier.

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