DEEP TRAPS ANALYSIS IN ALGAN/GAN HETEROSTRUCTURE TRANSISTORS

  • Aubry R.

AlGaN/GaN high electron mobility transistors are investigated by DLTS measurements. 6 different are extracted with the following activation energies: 0.12 eV, 0.15 eV, 0.21 eV, 0.42 eV, 0.49 eV and 0.94 eV. Based on comparison with literature results and measurements as a function of the pulse reverse bias, the trap localisation in the structure is discussed. Additional measurements as a function of the filling pulse duration reveal the presence of decorated extended defects in the samples.

Recent Publications

January 01, 2019

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© 2017 International World Wide Web Conference Committee (IW3C2), published under Creative Commons CC BY 4.0 License. Many of today's websites have recognised the importance of mobile friendly pages to keep users engaged and to provide a satisfying user experience. However, next to the experience provided by the sites themselves, ...

January 01, 2019

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© 2017 International World Wide Web Conference Committee (IW3C2), published under Creative Commons CC BY 4.0 License. Uber is a popular ride-sharing application that matches people who need a ride (or riders) with drivers who are willing to provide it using their personal vehicles. Despite its growing popularity, there exist ...

January 01, 2019

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© 2017 International World Wide Web Conference Committee (IW3C2), published under Creative Commons CC BY 4.0 License. Recent studies in social media spam and automation provide anecdotal argumentation of the rise of a new generation of spambots, so-called social spambots. Here, for the first time, we extensively study this novel ...