III-V Lab

Research and Development on opto-electronic and micro-electronic components

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III-V Lab at the system core

Created in 2004 by Nokia and Thales and extended to CEA in 2010, under the legal form of an Economic Interest Grouping, III-V Lab performs R&D on opto-electronic and micro-electronic components based on III-V semiconductor alloys, and realizes their integration with Silicon circuits and micro-systems, to cover different markets addressed by these 3 Parent Companies.

III-V Lab leading experts are capable of mastering the entire chain of design and implementation, starting with a very fine understanding of physics at the level of the atom itself. At the system core, they create a custom semiconductor material that does not exist in nature to meet the desired specifications.

The approach takes advantage of the commonalities between the technologies developed for different markets such as telecom, space, defence and security (for example, High bit rate Optical Fibre and Wireless Telecommunications, Microwave and Photonic systems for Defence, Security and Space)

Located at the heart of the Paris-Saclay Scientific campus, III-V Lab covers investigation from basic research to technology transfer for industrialization. It has also the capacity to produce and sell components (epitaxial wafers, processed wafers, modules) in small prototyping quantities. This approach fosters the emergence of high added-value component technology, then transferred to industrial entities of the parent companies or their partners.

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In-house components and circuits prototyping, from material research to devices to prototypes: Multi Physics Modelling, Material Growth (Epitaxy), Wafer Processing, Measurement
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Mastering material at the atomic scale

We use elements of columns III and V of the Mendeleïev table to make a III-V element. As III-V element can transport optical signals or fast electronic signals, we may hybrid these III-V elements on Silicon substrate which is the traditional material for microelectronics (Si is an element of column IV).

Some device realizations

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Hybrid RF GaN Circuit

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Ultra-Wide Bandwidth Semiconductor Optical Amplifier

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Silicon Photonics: III-V/Si Tunable laser